Deposition of silicon nitride from SiCl4 and NH3 in a low pressure RF plasmaSilicon nitride coatings were deposited in a low-pressure (1-10 Torr) RF plasma from SiCl4 and NH3 in the presence of argon onto stainless martensitic steel grounded and floating substrates at 300 C and 440 C respectively. The heating of the substrates depends mainly on the position and the induced RF power. The coatings were identified as silicon nitride by X-ray investigation and were found to contain chlorine by energy-dispersive analysis of X-rays. The growth rate, the microhardness and the chlorine concentration of the coatings were determined as a function of the total gas pressure, the RF power input and the NH3-to-SiCl4 ratio. It was observed that the coatings on the floating substrates have higher deposition rates and are of superior quality.
Document ID
19850054078
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Ron, Y. (NASA Lewis Research Center Cleveland, OH, United States)
Raveh, A. (NASA Lewis Research Center Cleveland, OH, United States)
Carmi, U. (NASA Lewis Research Center Cleveland, OH, United States)
Inspektor, A. (Atomic Energy Commission, Negev Nuclear Research Centre Beersheba, Israel)
Avni, R. (NASA Lewis Research Center Cleveland, OH; Atomic Energy Commission, Negev Nuclear Research Centre, Beersheba, Israel)