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A novel X-ray photoelectron spectroscopy study of the Al/SiO2 interfaceThe nondestructive measurement of the chemical and physical characteristics of the interface between bulk SiO2 and thick aluminum films is reported. Both X-ray phototelectron spectroscopy (XPS) and electrical measurements of unannealed, resistively evaporated Al films on thermal SiO2 indicate an atomically abrupt interface. Post metallization annealing at 450 C induces reduction of the SiO2 by the aluminum, at a rate consistent with the bulk reaction rate. The XPS measurement is performed from the SiO2 side after the removal of the Si substrate with XeF2 gas and thinning of the SiO2 layer with HF:ETOH. This represents a powerful new approach to the study of metal-insulator and related interfaces.
Document ID
19850056031
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Hecht, M. H.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Vasquez, R. P.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Grunthaner, F. J.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Zamani, N.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Maserjian, J.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena CA, United States)
Date Acquired
August 12, 2013
Publication Date
June 15, 1985
Publication Information
Publication: Journal of Applied Physics
Volume: 57
ISSN: 0021-8979
Subject Category
Solid-State Physics
Accession Number
85A38182
Distribution Limits
Public
Copyright
Other

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