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Plasma deposited hydrogenated carbon on GaAs and InPThe properties of diamond like carbon films grown by RF flow discharge 30 kHz plasma using methane are reported. The Cis XPS line shape of films showed localized hybrid carbon bonds as low as 40 to as high as 95 percent. Infrared spectroscopy and N(15) nuclear reaction profiling data indicated 35 to 42 percent hydrogen, depending inversely on deposition temperature. The deposition rate of films on Si falls off exponentially with substrate temperature, and nucleation does not occur above 200 C on GaAs and InP. Optical data of the films showed bandgap values of 2.0 to 2.4 eV increasing monotonically with CH4 flow rate.
Document ID
19850058235
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Warner, J. D.
(NASA Lewis Research Center Cleveland, OH, United States)
Pouch, J. J.
(NASA Lewis Research Center Cleveland, OH, United States)
Alterovitz, S. A.
(NASA Lewis Research Center Cleveland, OH, United States)
Liu, D. C.
(NASA Lewis Research Center Cleveland, OH, United States)
Lanford, W. A.
(New York, State University Albany, United States)
Date Acquired
August 12, 2013
Publication Date
June 1, 1985
Publication Information
Publication: Journal of Vacuum Science and Technology A
Volume: 3
ISSN: 0734-2101
Subject Category
Solid-State Physics
Accession Number
85A40386
Distribution Limits
Public
Copyright
Other

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