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Far-infrared transmittance of boron-implanted germanium at liquid-helium temperaturesThe transmission of far-infrared radiation of 100-microns-wavelength through Ge wafers ion implanted with B was measured at a temperature of approximately 4 K. Transmittance ranged from approximately 0.5 to 0.08 for doses from 3 x 10 to the 12th to 3 x 10 to the 15th/sq cm. The resistivity at temperatures between 4 and 1 K, and the impurity profiles of the implanted layers were also measured and correlated with the infrared transmittance.
Document ID
19850061127
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Hadek, V. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Watson, D. M. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Beichman, C. A. (California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Jack, M. D. (Hughes Aircraft Co., Carlsbad Technology Center CA, United States)
Date Acquired
August 12, 2013
Publication Date
March 15, 1985
Publication Information
Publication: Physical Review B - Solid State, 3rd Series
Volume: 31
ISSN: 0556-2805
Subject Category
Solid-State Physics
Accession Number
85A43278
Distribution Limits
Public
Copyright
Other

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