Recombination-active defects in silicon ribbon and polycrystalline solar cellsThis paper reports results from a study of recombination-active structural defects in silicon ribbon and polycrystalline solar cells using the electron beam induced current (EBIC) technique in a scanning electron microscope. It is demonstrated that low temperature EBIC measurements can reveal a range of defects that are not observable at room temperature, including slip dislocations in silicon dendritic web ribbons as well as decorated twin boundaries and dislocation complexes in cast polycrystalline silicon solar cell materials.
Document ID
19850066357
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Cheng, L. J. (California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Date Acquired
August 12, 2013
Publication Date
January 1, 1984
Subject Category
Solid-State Physics
Meeting Information
Meeting: Metallurgical Society of AIME, International Conference on Defects in Semiconductors