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Reducing Sodium Contamination in MOS DevicesMethod of removing positive ions from oxides in metal-oxide-semiconductor (MOS) transistors and intergrated circuits ensure freedom from contamination by sodium and other mobile positive ions. Electric field applied during oxide growth to push mobile Na + ions to surface. After cooling from growth temperature, field turned off and Na + contaminated surface layer etched away. New method intended to suplement established methods of minimizing ion contamination, such as scrupulous cleanliness in processing, purging with hydrogen chloride to react with and remove contaminants, and growing extra-thick gate oxide, then etching it to remove large portion of contaminants concentrated near surface.
Document ID
19860000040
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Dehaye, R. F.
Feltner, W. R.
Date Acquired
August 12, 2013
Publication Date
June 1, 1986
Publication Information
Publication: NASA Tech Briefs
Volume: 10
Issue: 1
ISSN: 0145-319X
Subject Category
Materials
Report/Patent Number
MFS-28034
Accession Number
86B10040
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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