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Etching Silicon Films With Xenon DifluorideMicroscopic circuit structures prepared for probing. Xenon difluoride removes relatively large amounts of silicon from integratedcircuit or solar-cell structures while leaving SiO2, Si3N4, Al2O3, and other compounds intact. In Etching Apparatus, solid XeF2 sublimated in vacuum, then allowed to flow over sample at controlled rate and pressure. Wafer etched from back to expose SiO2 and Al layers for spectroscopic analysis of SiO2/Al interface. Using XeF2 technique, silicon wafer with oxide layer reduced in thickness from standard 300 micrometer to as little as 10 nanometer without adversely affecting oxide.
Document ID
19860000221
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Hecht, M. H.
(Caltech)
Date Acquired
August 12, 2013
Publication Date
May 1, 1986
Publication Information
Publication: NASA Tech Briefs
Volume: 10
Issue: 3
ISSN: 0145-319X
Subject Category
Materials
Report/Patent Number
NPO-16527
NPO-16528
Accession Number
86B10221
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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