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Masking Technique for Ion-Beam Sputter EtchingImproved process for fabrication of integrated circuits developed. Technique utilizes simultaneous ion-beam sputter etching and carbon sputter deposition in conjunction with carbon sputter mask or organic mask decomposed to produce carbon-rich sputter-mask surface. Sputter etching process replenishes sputter mask with carbon to prevent premature mask loss.
Document ID
19860000295
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Banks, B. A.
Rutledge, S. K.
Date Acquired
August 12, 2013
Publication Date
May 1, 1986
Publication Information
Publication: NASA Tech Briefs
Volume: 10
Issue: 3
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
LEW-13899
Accession Number
86B10295
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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