NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login
Back to Results
GaAs Semi-Insulating Layer for a GaAs DeviceImproved design for GaAs electronic device or integrated circuit designed to operate at cryogenic temperatures, customary SiO2 insulating layer replaced by semi-insulating layer of GaAs. Thermal expansions of device and covering layer therefore match closely, and thermal stresses caused by immersion in cryogenic chamber nearly eliminated.
Document ID
19860000411
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Sherrill, G. (University of Virginia)
Mattauch, R. J. (University of Virginia)
Date Acquired
August 12, 2013
Publication Date
September 1, 1986
Publication Information
Publication: NASA Tech Briefs
Volume: 10
Issue: 5
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-16394
Accession Number
86B10411
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

Available Downloads

There are no available downloads for this record.

Related Records

There are no records associated with this record.
No Preview Available