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Influence of design variables on radiation hardness of silicon MINP solar cellsMetal-insulator-N/P silicon (MINP) solar cells were fabricated using different substrate resistivity values, different N-layer designs, and different I-layer designs. A shallow junction into an 0.3 ohm-cm substrate gave best efficiency whereas a deeper junction into a 1 to 4 ohm-cm substrate gave improved radiation hardness. I-layer design variation did little to influence radiation hardness.
Document ID
19860008385
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Anderson, W. A.
(State Univ. of New York Buffalo, NY, United States)
Solaun, S.
(State Univ. of New York Buffalo, NY, United States)
Rao, B. B.
(State Univ. of New York Buffalo, NY, United States)
Banerjee, S.
(State Univ. of New York Buffalo, NY, United States)
Date Acquired
August 12, 2013
Publication Date
January 1, 1985
Publication Information
Publication: NASA. Lewis Research Center Space Photovoltaic Research and Technology 1985
Subject Category
Energy Production And Conversion
Accession Number
86N17855
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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