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Depletion layer recombination effects on the radiation damage hardness of gallium arsenide cellsThe significant effect of junction depletion layer recombination on the efficiency of windowed GaAs cells was demonstrated. The effect becomes more pronounced as radiation damage occurs. The depletion is considered for 1 MeV electron fluences up to 10 to the 16th power e/sq m. The cell modeling separates damage in emitter and base or buffer layers using different damage coefficients is reported. The lower coefficient for the emitter predicts less loss of performance at fluences greater than 10 to the 15th power e/sq cm. A method for obtaining information on junction recombination effects as damage proceeds is described; this enables a more complete diagnosis of damage to be made.
Document ID
19860008389
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Garlick, G. F. J.
(Spectrolab, Inc. Sylmar, CA, United States)
Date Acquired
August 12, 2013
Publication Date
January 1, 1985
Publication Information
Publication: NASA. Lewis Research Center Space Photovoltaic Research and Technology 1985
Subject Category
Energy Production And Conversion
Accession Number
86N17859
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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