Electron and hole impact ionization coefficients in GaAs-Al(x)Ga(1-x)As superlattices

Electron and hole multiplication and impact ionization coefficients have been measured with pure carrier injection in p(+)-n(-)-n(+) diodes grown by molecular beam epitaxy. Values of the electron and hole ionization coefficient ratio alpha/beta = 2-5 are measured for superlattices with well width Lz greater than or equal to 100 A and alpha/beta greater than 10 is measured in a graded band-gap superlattice with a total well and barrier width LB + LZ = 120 A. The ratio decreases and becomes less than unity for smaller well sizes. This is caused by an increase in beta (E) while alpha (E) remains fairly constant. The results have been interpreted by considering varying hole confinement and scattering in the coupled quantum wells.