Barrier height determination on Schottky contacts formed at the back contact-semiconductor interface of degraded solar cellsA method is described of determining an equivalent circuit for solar cells which have degraded as a result of the formation of a rectifying Schottky barrier at the back contact. An excellent fit of experimental data has been achieved using SCEPTRE with an equivalent circuit derived from the shape of the measured current voltage characteristics. One key parameter of the Schottky barrier diode, the reverse saturation current, can be used to determine the barrier potential. The barrier potential increases as the cell is stressed with 0.5 volts being a typical experimentally determined value for a degraded cell.
Document ID
19860035770
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Misiakos, K. (Clemson Univ. SC, United States)
Lathrop, J. W. (Clemson University SC, United States)