NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
1985 Annual Conference on Nuclear and Space Radiation Effects, 22nd, Monterey, CA, July 22-24, 1985, ProceedingsBasic mechanisms of radiation effects in structures and materials are discussed, taking into account the time dependence of interface state production, process dependent build-up of interface states in irradiated N-channel MOSFETs, bias annealing of radiation and bias induced positive charges in n- and p-type MOS capacitors, hole removal in thin-gate MOSFETs by tunneling, and activation energies of oxide charge recovery in SOS or SOI structures after an ionizing pulse. Other topics investigated are related to radiation effects in devices, radiation effects in integrated circuits, spacecraft charging and space radiation effects, single-event phenomena, hardness assurance and radiation sources, SGEMP/IEMP phenomena, EMP phenomena, and dosimetry and energy-dependent effects. Attention is given to a model of the plasma wake generated by a large object, gate charge collection and induced drain current in GaAs FETs, simulation of charge collection in a multilayer device, and time dependent dose enhancement effects on integrated circuit transient response mechanisms.
Document ID
19860040763
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Jones, C. W.
(Kaman Sciences Corp. Dikewood Div., Albuquerque, NM, United States)
Date Acquired
August 12, 2013
Publication Date
December 1, 1985
Publication Information
ISSN: 0018-9499
Subject Category
Electronics And Electrical Engineering
Accession Number
86A25501
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.
No Preview Available