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Hardening of commercial CMOS PROMs with polysilicon fusible linksThe method by which a commercial 4K CMOS PROM with polysilicon fuses was hardened and the feasibility of applying this method to a 16K PROM are presented. A description of the process and the necessary minor modifications to the original layout are given. The PROM circuit and discrete device characteristics over radiation to 1000K rad-Si are summarized. The dose rate sensitivity of the 4K PROMs is also presented.
Document ID
19860040780
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Newman, W. H.
(Harris Semiconductor Melbourne, FL, United States)
Rauchfuss, J. E.
(Harris Semiconductor Melbourne, FL, United States)
Date Acquired
August 12, 2013
Publication Date
December 1, 1985
Publication Information
Publication: IEEE Transactions on Nuclear Science
Volume: NS-32
ISSN: 0018-9499
Subject Category
Electronics And Electrical Engineering
Accession Number
86A25518
Distribution Limits
Public
Copyright
Other

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