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Growth of crystals of several boron-carbon compositions by chemical vapor depositionBoron-carbon compounds have been deposited by the flow of carbon tetrachloride and boron trichloride, in the presence of a large excess of hydrogen, over a graphite surface maintained at 1000-1300 C. Deposits were formed on either an RF-heated disc or a tube or insert heated by a resistance furnace. Crystalline materials ranging in composition from B2C to B17C have been obtained.
Document ID
19860044116
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1016/0022-0248(86)90266-6
Authors
Kevill, D. N. (University of Northern Illinois De Kalb, IL, United States)
Rissmann, T. J. (University of Northern Illinois De Kalb, IL, United States)
Brewe, D. (Northern Illinois University Dekalb, IL, United States)
Wood, C. (California Institute of Technology, Jet Propulsion Laboratory, Pasadena; Northern Illinois University DeKalb, IL, United States)
Date Acquired
August 12, 2013
Publication Date
January 1, 1986
Publication Information
Publication: Journal of Crystal Growth
Volume: 74
ISSN: 0022-0248
Subject Category
Solid-State Physics
Accession Number
86A28854
Distribution Limits
Public
Copyright
Other

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