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Effects of macroscopic inhomogeneities on electron mobility in semi-insulating GaAsIt is shown that defect inhomogeneities of sizes larger than the electron mean free path are responsible for the low values and anomalous temperature dependence of the electron mobility in semi-insulating (SI) GaAs. The room-temperature electron mobility values below about 6000 sq cm/V s cannot be uniquely used for the determination of the concentration of ionized defects, since the contribution from inhomogeneities usually exceeds that from scattering by ionized impurities. The effects of the macroscopically inhomogeneous distribution of residual acceptors and the major deep donor EL2 diminish at elevated temperatures between 600 and 900 K, which offers a means for identification of inhomogeneities, and furthermore explains recently reported steplike mobility versus temperature behavior in SI-GaAs.
Document ID
19860051322
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Walukiewicz, W.
(California, University Berkeley, United States)
Wang, L.
(California Univ. Berkeley, CA, United States)
Pawlowicz, L. M.
(California Univ. Berkeley, CA, United States)
Lagowski, J.
(California Univ. Berkeley, CA, United States)
Gatos, H. C.
(MIT Cambridge, MA, United States)
Date Acquired
August 12, 2013
Publication Date
May 1, 1986
Publication Information
Publication: Journal of Applied Physics
Volume: 59
ISSN: 0021-8979
Subject Category
Solid-State Physics
Accession Number
86A36060
Funding Number(s)
CONTRACT_GRANT: DE-AC03-76SF-00098
Distribution Limits
Public
Copyright
Other

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