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Ka-band monolithic gain control amplifierA monolithic gain control amplifier for Ka-band has been developed based on 0.25 micron-gate-length dual-gate FETs fabricated on ion-implanted material. A single-stage monolithic amplifier gives a gain of 6 dB at 31 GHz including fixture losses with a gain control range of over 20 dB. The device and IC design and fabrication are described.
Document ID
19860056605
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Geddes, J. (Honeywell, Inc. Bloomington, MN, United States)
Sokolov, V. (Honeywell, Inc. Bloomington, MN, United States)
Contolatis, T. (Honeywell, Inc. Bloomington, MN, United States)
Date Acquired
August 12, 2013
Publication Date
April 24, 1986
Publication Information
Publication: Electronics Letters
Volume: 22
ISSN: 0013-5194
Subject Category
Electronics And Electrical Engineering
Accession Number
86A41343
Funding Number(s)
CONTRACT_GRANT: NAS3-23356
Distribution Limits
Public
Copyright
Other

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