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Low-temperature deposition of low resistivity ZnSe films by reactive sputteringThe use of reactive dc magnetron cosputtering of Zn and the dopant In in an H2Se/Ar gaseous mixture is described. It is observed that initial deposition using pure Zn targets produced yellowish transparent ZnSe films on glass with a film resistivity of 10 to the 8th ohms cm and deposition using a Zn target doped with a fixed 1 percent of In produced ZnSe films with resistivities of about 10,000 ohms cm. The improvement of film conductivity by optimizing the In content in the ZnSe films is discussed; the ZnSe resistivity dependence on In flux is studied. Optical absorption/transmission measurements reveal a photon energy band gap of 2.65 eV at room temperature and X-ray diffraction show highly oriented polycrystalline films on glass with the c axis parallel to the plane of the film. Compositional analysis was performed and the Zn/Se ratio is measure as 48.8/49.0 with an In concentration of 1.16 percent. ZnSe films deposited on glass and conducting SnO2-coated glass substrates with a resistance of 20 ohms cm and a substrate temperature of 120 C have been fabricated.
Document ID
19860059625
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Stirn, R. J.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Nouhi, A.
(California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Date Acquired
August 12, 2013
Publication Date
June 30, 1986
Publication Information
Publication: Applied Physics Letters
Volume: 48
ISSN: 0003-6951
Subject Category
Solid-State Physics
Accession Number
86A44363
Distribution Limits
Public
Copyright
Other

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