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A graphical treatment of combined evaporation and segregation contributions to impurity profiles for zone-refining in vacuumImpurity concentration profiles have been calculated for zone-refining when both segregation and evaporation of impurities are operative, assuming a uniform initial concentration. Graphic profiles are presented for selected values of effective segregation coefficient k, effective evaporation coefficient g, and number of zone passes n. Some examples of impurity profiles for float-zoned silicon are also presented.
Document ID
19860061227
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1016/0022-0248(86)90225-3
Authors
Ciszek, T. F. (Solar Energy Research Institute Golden, CO, United States)
Date Acquired
August 12, 2013
Publication Date
May 1, 1986
Publication Information
Publication: Journal of Crystal Growth
Volume: 75
ISSN: 0022-0248
Subject Category
Solid-State Physics
Accession Number
86A45965
Funding Number(s)
CONTRACT_GRANT: DE-AC02-83CH-10093
Distribution Limits
Public
Copyright
Other

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