Slow crack growth measurement using an electrical grid

Photolithography was used to produce a resistance grid on the surface of a DCB fracture specimen. The grid line spacings were 10 microns over a distance of 2 cm. Slow crack growth was measured on soda-lime-silica glass. At low values of K(I) (0.3 to 0.4 MPa.sq r + m, increased. Equations are given for the design of grids. The grid technique could be used to measure very slow crack growth at high temperature with appropriate compatible metal-ceramic materials.