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MOSFET's for Cryogenic AmplifiersStudy seeks ways to build transistors that function effectively at liquid-helium temperatures. Report discusses physics of metaloxide/semiconductor field-effect transistors (MOSFET's) and performances of these devices at cryogenic temperatures. MOSFET's useful in highly sensitive cryogenic preamplifiers for infrared astronomy.
Document ID
19870000110
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Dehaye, R. (Tennessee Technological University)
Ventrice, C. A.
Date Acquired
August 13, 2013
Publication Date
March 1, 1987
Publication Information
Publication: NASA Tech Briefs
Volume: 11
Issue: 3
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
MFS-27111
Accession Number
87B10110
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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