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Metastability of the midgap level EL 2 in GaAs - Relationship with the As antisite defectIt is found that the rate of the photoinduced transition of the GaAs midgap level EL 2 to its metastable state increases as its occupation increases. High-resolution optical spectra of this transition exhibit a sharp peak very similar to the no-phonon line of the intracenter absorption of the As antisite defect. These findings show that the transition to the metastable state is initiated from the ground state 1A1, and it is finalized via the excited state 1T2 of the neutral As antisite defect. They thus provide a new basis for the critical assessment of the EL 2 metastability models and further confirmation of the association of EL 2 with the isolated As antisite defect.
Document ID
19870027393
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Skowronski, M.
(MIT Cambridge, MA, United States)
Lagowski, J.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Gatos, H. C.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Date Acquired
August 13, 2013
Publication Date
September 15, 1985
Publication Information
Publication: Physical Review B, 3rd Series
Volume: 32
ISSN: 0163-1829
Subject Category
Solid-State Physics
Accession Number
87A14667
Funding Number(s)
CONTRACT_GRANT: NSG-7331
Distribution Limits
Public
Copyright
Other

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