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Growth-induced anisotropy in bismuth - Rare-earth iron garnetsThe bismuth-doped rare-earth iron garnets, (R3-x-yBixPby)Fe5O12 (Bi:RIG, R = Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Y), were prepared under constant growth conditions to investigate the influence of ionic species on the bismuth-based growth-induced uniaxial anisotropy K(u) exp g. The effect of ionic species on growth-induced anisotropy in Bi:RIG was not consistent with the ionic size model of site ordering. In particular, Bi:SmIG, Bi:EuIG, and Bi:TbIG displayed high growth-induced anisotropies, up to 331,000 erg/cu cm at room temperature for x of about 0.5. The temperature dependence of these K(u) exp gs was somewhat higher than that of the well studied Bi:YIG. The site ordering of Bi can be modeled by assuming that small, low-oxygen-coordination BiOw exp +3-2 w melt complexes have a strong site selectivity for small, high-oxygen coordination sites at the growth interface.
Document ID
19870029895
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Fratello, V. J.
(Bell Telephone Labs., Inc. Murray Hill, NJ, United States)
Slusky, S. E. G.
(Bell Telephone Labs., Inc. Murray Hill, NJ, United States)
Brandle, C. D.
(Bell Telephone Labs., Inc. Murray Hill, NJ, United States)
Norelli, M. P.
(AT&T Bell Laboratories Murray Hill, NJ, United States)
Date Acquired
August 13, 2013
Publication Date
October 1, 1986
Publication Information
Publication: Journal of Applied Physics
Volume: 60
ISSN: 0021-8979
Subject Category
Solid-State Physics
Accession Number
87A17169
Funding Number(s)
CONTRACT_GRANT: F33615-81-C-1404
Distribution Limits
Public
Copyright
Other

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