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Characterization of the heavily doped emitter and junction regions of silicon solar cells using an electron beamHeavily doped emitter and junction regions of silicon solar cells are investigated by means of the electron-beam-induced-current (EBIC) technique. Although the experimental EBIC data are collected under three-dimensional conditions, it is analytically demonstrated with two numerical examples that the solutions obtained with one-dimensional numerical modeling are adequate. EBIC data for bare and oxide-covered emitter surfaces are compared with theory. The improvement in collection efficiency when an emitter surface is covered with a 100-A SiO2 film varies with beam energy; for a cell with a junction depth of 0.35 microns, the improvement is about 54 percent at 2 keV.
Document ID
19870029903
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Luke, K. L.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena; California State University Long Beach, United States)
Cheng, L.-J.
(California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Date Acquired
August 13, 2013
Publication Date
October 1, 1986
Publication Information
Publication: Journal of Applied Physics
Volume: 60
ISSN: 0021-8979
Subject Category
Energy Production And Conversion
Accession Number
87A17177
Distribution Limits
Public
Copyright
Other

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