High-efficiency double-heterostructure AlGaAs/GaAs solar cellsDouble-heterostructure solar cells have been fabricated from wafers prepared by using organometallic chemical vapor deposition to grow a p GaAs absorbing layer sandwiched between p(+) and n(+) AlGaAs layers. The best cell, which incorporates an abrupt AlGaAs/GaAs shallow heterojunction, exhibits a global AM1 one-sun conversion efficiency of 23 percent. The rate at which the open-circuit voltage decreases with increasing temperature is lower for the double-heterostructure cells than for GaAs shallow-homojunction cells.
Document ID
19870032586
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Gale, R. P. (Massachusetts Inst. of Tech. Lexington, MA, United States)
Fan, John C. C. (Massachusetts Inst. of Tech. Lexington, MA, United States)
Turner, G. W. (Massachusetts Inst. of Tech. Lexington, MA, United States)