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Performance and temperature dependencies of proton irradiated n/p and p/n GaAs and n/p silicon cellsn/p homojunction GaAs cells are found to be more radiation resistant than p/n heteroface GaAs under 10 MeV proton irradiation. Both GaAs cell types outperform conventional silicon n/p cells under the same conditions. An increased temperature dependency of maximum power for the GaAs n/p cells is attributed to differences in Voc between the two GaAs cell types. These results and diffusion length considerations are consistent with the conclusion that p-type GaAs is more radiation resistant than n-type and therefore that the n/p configuration is possibly favored for use in the space radiation environment. However, it is concluded that additional work is required in order to choose between the two GaAs cell configurations.
Document ID
19870032595
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Weinberg, I.
Swartz, C. K.
Hart, R. E., Jr.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 13, 2013
Publication Date
January 1, 1985
Subject Category
Energy Production And Conversion
Accession Number
87A19869
Distribution Limits
Public
Copyright
Other

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