Observed changes in a-Si:H cell characteristics due to long term temperature stressDetermination of thermally induced degradation mechanisms affecting thin film amorphous silicon solar cells through the use of laboratory accelerated stress testing requires acquisition of specially constructed, individually addressable test cells and the development of highly repeatable instrumentation which is not influenced by short-term reversible optical effects. This paper illustrates these considerations by describing accelerated temperature stress procedures and test results for one type of a-Si:H cell. Observed electrical characteristic changes indicate that two types of stress induced mechanisms are operating - one of which is self limiting and can be observed at lower temperatures and one which continues to complete degradation. The self limiting mechanism can result in a dramatic improvement to cells having initially low Voc values.
Document ID
19870032614
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Lathrop, Jay W. (Clemson University SC, United States)
Royal, Edward (California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)