Measurement and analysis of solar cell current-voltage characteristicsApproaches to measurement and analysis of solar cell current-voltage characteristics under dark and illuminated conditions are discussed. Measurements are taken with a computer based data acquisition system for temperatures in the range of -100 to +100 C. In the fitting procedure, the various I(oi) and C(i) as well as R(S) and R(SH) are determined. Application to current-voltage analyses of high efficiency silicon cells and Boeing CdS/CuInSe2 are discussed. In silicon MINP cells, it is found that at low voltages a tunneling mechanism is dominant, while at larger voltages the I-V characteristics are usually dominated by emitter recombination. In the case of Boeing cells, a current transport model based on a tunneling mechanism and interface recombination acting in series has been developed as a result of I-V analyses.
Document ID
19870032638
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Olsen, Larry C. (Washington Univ. Richland, WA, United States)
Addis, F. William (Washington Univ. Richland, WA, United States)
Doyle, Dan H. (Washington Univ. Richland, WA, United States)
Miller, Wesley A. (Washington, University Richland, United States)