Hot-spot durability testing of amorphous cells and modulesThis paper discusses the results of a study to determine the hot-spot susceptibility of amorphous-silicon (a-Si) cells and modules, and to provide guidelines for reducing that susceptibility. Amorphous-Si cells are shown to have hot-spot susceptibility levels similar to crystalline-silicon (C-Si) cells. This premise leads to the fact that the same general guidelines must apply to protecting a-Si cells from hot-spot stressing that apply to C-Si cells. Recommendations are made on ways of reducing a-Si module hot-spot susceptibility including the traditional method of using bypass diodes and a new method unique to thin-film cells, limiting the string current by limiting cell area.
Document ID
19870032660
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Gonzalez, Charles (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Jetter, Elizabeth (California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)