Structural defect characterization of silicon dendritic web ribbonsAn EBIC study of the cross section of silicon dendritic web ribbon has revealed that recombination-active structural defects are mainly concentrated in the inner part of the ribbon, particularly at and near the twin plane, whereas the material near the surface has significantly fewer defects. An analysis of the distribution of etch pits due to slip dislocations created by shear stress indicates that a minimum in the dislocation density is frequently observed in the ribbon adjacent to the dendrite.
Document ID
19870032665
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Cheng, L. J. (California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)