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Variable angle of incidence spectroscopic ellipsometry Application to GaAs-Al(x)Ga(1-x)As multiple heterostructuresThe sensitivity of spectroscopic ellipsometry data to multilayer model parameters is shown to be a strong function of the angle of incidence. A quantitative study of sensitivity versus angle of incidence is performed for a GaAs-Al(x)Ga(1-x)As-GaAs substrate structure, showing that maximum sensitivity to layer thicknesses and AlGaAs composition occurs near the wavelength-dependent principal angle. These results are verified by experimental measurements on two molecular-beam epitaxy grown samples.
Document ID
19870033245
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Snyder, Paul G.
(Nebraska Univ. Lincoln, NE, United States)
Rost, Martin C.
(Nebraska Univ. Lincoln, NE, United States)
Bu-Abbud, George H.
(Nebraska Univ. Lincoln, NE, United States)
Woollam, John A.
(Nebraska, University Lincoln, United States)
Alterovitz, Samuel A.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 13, 2013
Publication Date
November 1, 1986
Publication Information
Publication: Journal of Applied Physics
Volume: 60
ISSN: 0021-8979
Subject Category
Solid-State Physics
Accession Number
87A20519
Funding Number(s)
CONTRACT_GRANT: NAG3-154
Distribution Limits
Public
Copyright
Other

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