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Discovery of heavy-ion induced latchup in CMOS/epi devicesThe observance of latchup in CMOS/epi devices upon exposure to krypton ions is reported. The effect of epi layer thickness on latchup susceptibility is discussed. An approach to eliminating this effect is indicated.
Document ID
19870034755
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Nichols, D. K. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Price, W. E. (California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Shoga, M. A. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Duffey, J. (Hughes Aircraft Co. El Segundo, CA, United States)
Kolasinsky, W. A. (Aerospace Corp. Los Angeles, CA, United States)
Date Acquired
August 13, 2013
Publication Date
December 1, 1986
Publication Information
Publication: IEEE Transactions on Nuclear Science
Volume: NS-33
ISSN: 0018-9499
Subject Category
Electronics And Electrical Engineering
Accession Number
87A22029
Distribution Limits
Public
Copyright
Other

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