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Low energy dislocation structures in epitaxyThe principle of minimum energy was applied to epitaxial interfaces to show the interrelationship beteen misfit, overgrowth thickness and misfit dislocation spacing. The low energy dislocation configurations were presented for selected interfacial geometries. A review of the interfacial energy calculations was made and a critical assessment of the agreement between theory and experiment was presented. Modes of misfit accommodation were presented with emphasis on the distinction between kinetic effects and equilibrium conditions. Two-dimensional and three-dimensional overgrowths were treated together with interdiffusion-modified interfaces, and several models of interfacial structure were treated including the classical and the current models. The paper is concluded by indicating areas of needed investigation into interfacial structure.
Document ID
19870036154
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Van Der Merwe, Jan H.
(Pretoria, University Republic of South Africa, United States)
Woltersdorf, J.
(Akademie der Wissenschaften der DDR Institut fuer Festkoerperphysik und Elektronenmikroskopie, Halle, Germany)
Jesser, W. A.
(Virginia, University Charlottesville, United States)
Date Acquired
August 13, 2013
Publication Date
January 1, 1986
Publication Information
Publication: Materials Science and Engineering
Volume: 81
ISSN: 0025-5416
Subject Category
Solid-State Physics
Accession Number
87A23428
Funding Number(s)
CONTRACT_GRANT: NAG1-350
Distribution Limits
Public
Copyright
Other

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