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Forward-bias tunneling - A limitation to bipolar device scalingForward-bias tunneling is observed in heavily doped p-n junctions of bipolar transistors. A simple phenomenological model suitable to incorporation in device codes is developed. The model identifies as key parameters the space-charge-region (SCR) thickness at zero bias and the reduced doping level at its edges which can both be obtained from CV characteristics. This tunneling mechanism may limit the maximum gain achievable from scaled bipolar devices.
Document ID
19870038588
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Del Alamo, Jesus A.
(Stanford Univ. CA, United States)
Swanson, Richard M.
(Stanford, University CA, United States)
Date Acquired
August 13, 2013
Publication Date
November 1, 1986
Publication Information
Publication: IEEE Electron Device Letters
Volume: EDL-7
ISSN: 0741-3106
Subject Category
Electronics And Electrical Engineering
Accession Number
87A25862
Funding Number(s)
CONTRACT_GRANT: JPL-957159
Distribution Limits
Public
Copyright
Other

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