Photoelectrochemical fabrication of sawtooth gratings in n-GaAs

A photoelectrochemical approach is employed to fabricate exceptionally smooth low-pitch grating structures consisting of polished single crystals of (100) oriented n-GaAs in a sawtooth profile. The depth of the edged features is controlled by monitoring the total coulombs passed, and the rate of etching is precisely controlled by the light intensity, minimizing diffusional gradients in the liquid which may impair the uniformity. Symmetrical grooves spaced 10 microns apart will have a depth of 7.14 microns, and typically, 10-20 percent less total charge is required.