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Rare-earth substitution in (BiYCa)3(FeSiGe)5O12 bubble filmsThe substitution of Y by Sm, Tb, Gd, and Ho in (BiYCa)3 FeSiGe)5O12 bubble garnet is shown to have large effects on the growth-induced anisotropy (GIA). The presently accepted film composition intended for 6-or 8-micron-period bubble memory devices demands partial substitution of Y by Gd and Ho. However, comparing films grown under the same growth conditions, it is observed that YGdHoBilG films posess less (GIA) than their Gd, Ho-free counterparts. Thus, to satisfy (GIA) requirements, the supercooling during growth must be increased by 20 K to 80 K with undesirable effects on defect densities. A new film composition containing Sm, Tb, and Gd has been formulated to satisfy all known material property specifications for 6- or 8-micron-period memory devices. It can be grown with only 45-50 K supercooling.
Document ID
19870041840
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Luther, L. C.
(Bell Telephone Labs., Inc. Murray Hill, NJ, United States)
Slusky, S. E. G.
(Bell Telephone Labs., Inc. Murray Hill, NJ, United States)
Brandle, C. D.
(Bell Telephone Labs., Inc. Murray Hill, NJ, United States)
Norelli, M. P.
(AT&T Bell Laboratories Murray Hill, NJ, United States)
Date Acquired
August 13, 2013
Publication Date
January 1, 1987
Publication Information
Publication: Journal of Applied Physics
Volume: 61
ISSN: 0021-8979
Subject Category
Solid-State Physics
Accession Number
87A29114
Funding Number(s)
CONTRACT_GRANT: F33615-81-C-1404
Distribution Limits
Public
Copyright
Other

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