NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Chemically assisted ion beam etching of polycrystalline and (100)tungstenA chemically assisted ion-beam etching technique is described which employs an ion beam from an electron-bombardment ion source and a directed flux of ClF3 neutrals. This technique enables the etching of tungsten foils and films in excess of 40 microns thick with good anisotropy and pattern definition over areas of 30 sq mm, and with a high degree of selectivity. (100) tungsten foils etched with this process exhibit preferred-orientation etching, while polycrystalline tungsten films exhibit high etch rates. This technique can be used to pattern the dispenser cathode surfaces serving as electron emitters in traveling-wave tubes to a controlled porosity.
Document ID
19870045825
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Garner, Charles
(California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Date Acquired
August 13, 2013
Publication Date
February 1, 1987
Publication Information
Publication: Journal of Vacuum Science and Technology B
Volume: 5
ISSN: 0734-211X
Subject Category
Solid-State Physics
Accession Number
87A33099
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.
No Preview Available