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Analysis of plastic deformation in silicon web crystalsNumerical calculation of 111-plane 110-line slip activity in silicon web crystals generated by thermal stresses is in good agreement with etch pit patterns and X-ray topographic data. The data suggest that stress redistribution effects are small and that a model, similar to that proposed by Penning (1958) and Jordan (1981) but modified to account for dislocation annihilation and egress, can be used to describe plastic flow effects during silicon web growth.
Document ID
19870049906
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1016/0022-0248(87)90162-X
Authors
Spitznagel, J. A. (Westinghouse Electric Corp. Pittsburgh, PA, United States)
Seidensticker, R. G. (Westinghouse Electric Corp. Pittsburgh, PA, United States)
Lien, S. Y. (Westinghouse Electric Corp. Pittsburgh, PA, United States)
Mchugh, J. P. (Westinghouse Electric Corp. Pittsburgh, PA, United States)
Hopkins, R. H. (Westinghouse Research and Development Center Pittsburgh, PA, United States)
Date Acquired
August 13, 2013
Publication Date
March 1, 1987
Publication Information
Publication: Journal of Crystal Growth
Volume: 82
Issue: 1-2,
ISSN: 0022-0248
Subject Category
Solid-State Physics
Accession Number
87A37180
Distribution Limits
Public
Copyright
Other

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