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The growth and in situ characterization of chemical vapor deposited SiO2This paper reports the results of studies of the kinetics of remote (indirect) plasma enhanced low pressure CVD growth of SiO2 on Si and InP and of the in situ characterization of the electrical surface properties of InP during CVD processing. In the latter case photoluminescence was employed as a convenient and sensitive noninvasive method for characterizing surface trap densities. It was determined that, provided certain precautions are taken, the growth of SiO2 occurs in a reproducible and systematic fashion that can be expressed in an analytic form useful for growth rate prediction. Moreover, the in situ photoluminescence studies have yielded information on sample degradation resulting from heating and chemical exposure during the CVD growth.
Document ID
19870060369
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Iyer, R.
(Colorado State Univ. Fort Collins, CO, United States)
Chang, R. R.
(Colorado State Univ. Fort Collins, CO, United States)
Lile, D. L.
(Colorado State University Fort Collins, United States)
Date Acquired
August 13, 2013
Publication Date
May 1, 1987
Publication Information
Publication: Journal of Crystal Growth
Volume: 83
Issue: 2, Ma
ISSN: 0022-0248
Subject Category
Solid-State Physics
Accession Number
87A47643
Distribution Limits
Public
Copyright
Other

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