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Studies Of Single-Event-Upset ModelsReport presents latest in series of investigations of "soft" bit errors known as single-event upsets (SEU). In this investigation, SEU response of low-power, Schottky-diode-clamped, transistor/transistor-logic (TTL) static random-access memory (RAM) observed during irradiation by Br and O ions in ranges of 100 to 240 and 20 to 100 MeV, respectively. Experimental data complete verification of computer model used to simulate SEU in this circuit.
Document ID
19880000085
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Zoutendyk, J. A. (Caltech)
Smith, L. S. (Caltech)
Soli, G. A. (Caltech)
Date Acquired
August 13, 2013
Publication Date
February 1, 1988
Publication Information
Publication: NASA Tech Briefs
Volume: 12
Issue: 2
ISSN: 0145-319X
Subject Category
Electronic Systems
Report/Patent Number
NPO-16735
Accession Number
88B10085
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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