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Development of improved p-type silicon-germanium alloysAnnealing experiments in the temperature range 1100-1275 C have been performed on p-type Si(0.8)Ge(0.2) samples with BP, B(6.5)P, and GaSb material additives. Both electrical resistivity and Seebeck coefficient generally decrease for these samples as annealing temperature is increased, with thermoelectric power factor sometimes being improved by annealing.
Document ID
19880024771
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Mclane, George (U.S. Army, Electronics Technology and Devices Laboratory, Fort Monmouth NJ, United States)
Wood, Charles (Army Electronics Technology and Devices Lab. Fort Monmouth, NJ, United States)
Vandersande, Jan (California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Raag, Valvo (Army Electronics Technology and Devices Lab. Fort Monmouth, NJ, United States)
Heshmatpour, Ben (Thermo Electron Corp. Waltham, MA, United States)
Date Acquired
August 13, 2013
Publication Date
January 1, 1987
Subject Category
Solid-State Physics
Meeting Information
Meeting: IECEC ''87
Location: Philadelphia, PA
Country: United States
Start Date: August 10, 1987
End Date: August 14, 1987
Accession Number
88A11998
Distribution Limits
Public
Copyright
Other

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