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Recent developments on a 128 x 128 indium antimonide/FET switch hybrid imager for low-background applicationsBy combining high-quality mesa photovoltaic indium antimonide detector material with a silicon x-y FET switch multiplexer, a useful infrared area detector has been developed. This device is intended for low-background applications, where high sensitivity is required. Initial characterization of the detector at 80 K showed a KTC limited read noise of less than 1000 electrons, good dark current, responsivity uniformity, and a maximum readout rate of 10 MHz. The hybrid mating technology has sufficient precision to allow expansion to a 256 x 256 format. The dark current in the detector material is sufficiently low to allow full-frame integration, even with arrays as large as 256 x 256 elements.
Document ID
19880025465
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Bailey, Gary C.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena CA, United States)
Niblack, Curtiss A.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Wimmers, James T.
(Cincinnati Electronics Corp. OH, United States)
Date Acquired
August 13, 2013
Publication Date
January 1, 1986
Subject Category
Electronics And Electrical Engineering
Accession Number
88A12692
Distribution Limits
Public
Copyright
Other

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