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Performance characteristics of InGaAs/GaAs and GaAs/InGaAlAs coherently strained superlattice photodiodesThe properties of In(0.24)Ga(0.76)As/GaAs and GaAs/In(0.05)Ga(0.58)Al(0.37)As superlattice photodiodes grown by molecular beam epitaxy have been investigated. From the temporal response characteristics, deconvolved rise times about 60-100 ps are obtained. The measured responsivities of the photodiodes with dark currents of 5-10 nA at 10 V are about 0.4 A/W, which correspond to peak external quantum efficiencies of about 60 percent. These results indicate that very high performance photodiodes can be realized with strained layers.
Document ID
19880027554
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Das, Utpal
(Michigan Univ. Ann Arbor, MI, United States)
Zebda, Yousef
(Michigan Univ. Ann Arbor, MI, United States)
Bhattacharya, Pallab
(Michigan Univ. Ann Arbor, MI, United States)
Chin, Albert
(Michigan, University Ann Arbor, United States)
Date Acquired
August 13, 2013
Publication Date
October 12, 1987
Publication Information
Publication: Applied Physics Letters
Volume: 51
ISSN: 0003-6951
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
AD-A193280
Accession Number
88A14781
Funding Number(s)
CONTRACT_GRANT: DAAL03-87-K-0007
CONTRACT_GRANT: NAG1-555
Distribution Limits
Public
Copyright
Other

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