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Characteristics of GaAs with inverted thermal conversionGaAs crystals exhibiting inverted thermal conversion (ITC) of resistivity were investigated in conjunction with standard semiinsulating (SI) GaAs regarding characteristics important in device processing. It was established that dislocation density and Si implant activation are unaffected by transformation to the ITC state. However, in ITC GaAs the controlled increase of the EL2 (native midgap donor) concentration during annealing makes it possible to attain resistivities one order of magnitude greater (e.g., about 10 to the 9th ohm cm of 300 K) than those attained in standard SI GaAs (e.g., 10 to the 7th-10 to the 8th ohm cm).
Document ID
19880028198
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Kang, C. H.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Lagowski, J.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Gatos, H. C.
(MIT Cambridge, MA, United States)
Date Acquired
August 13, 2013
Publication Date
October 15, 1987
Publication Information
Publication: Journal of Applied Physics
Volume: 62
ISSN: 0021-8979
Subject Category
Solid-State Physics
Accession Number
88A15425
Distribution Limits
Public
Copyright
Other

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