Absolute oscillator strengths for 108 lines of Si I between 163 and 410 nanometers

Measurements of neutral silicon oscillator strengths (f-values) obtained by absorption and emission techniques have been combined using the numerical procedure of Cardon et al. (1979) to produce 108 f-values for the Si I lines between 163 and 410 nm. Beam-foil-lifetime measurements were employed to determine the absolute scale. The present measurements have uncertainties of about 0.07 dex (+ or - 16 percent) at the 1-sigma level of confidence. Good agreement is obtained between the results and previous data. The data also provide upper limits for the f-values of 22 other lines and information on the lifetimes for 36 levels in Si I.