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Single-event upset (SEU) in a DRAM with on-chip error correctionResults are given of SEU measurements on 256K dynamic RAMs with on-chip error correction. They are claimed to be the first ever reported. A (12/8) Hamming error-correcting code was incorporated in the layout. Physical separation of the bits in each code word was used to guard against multiple bits being disrupted in any given word. Significant reduction in observed errors is reported.
Document ID
19880038162
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Zoutendyk, J. A.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Schwartz, H. R.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Watson, R. K.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena CA, United States)
Hasnain, Z.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Nevile, L. R.
(Micron Tehnology, Inc. Boise, ID, United States)
Date Acquired
August 13, 2013
Publication Date
December 1, 1987
Publication Information
Publication: IEEE Transactions on Nuclear Science
Volume: NS-34
ISSN: 0018-9499
Subject Category
Electronics And Electrical Engineering
Accession Number
88A25389
Distribution Limits
Public
Copyright
Other

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