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Electron beam source molecular beam epitaxial growth of analog graded Al(x)Ga(1-x)As ballistic transistorsA new method has been developed for the growth of graded band-gap Al(x)Ga(1-x)As alloys by molecular beam epitaxy which is based upon electron beam evaporation of the group III elements. The metal fluxes are measured and feedback controlled using a modulated ion gauge sensor. The system is computer controlled which allows precise programming of the Ga and Al evaporation rates. The large dynamic response of the metal sources enables growth of variable band-gap III-V alloys with arbitrary composition profiles. This new technique is demonstrated by synthesis of analog graded Al(x)Ga(1-x)As unipolar ballistic electron transistors.
Document ID
19880039778
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Malik, Roger J.
(Bell Telephone Labs., Inc. Murray Hill, NJ, United States)
Levi, Anthony F. J.
(AT&T Bell Laboratories Murray Hill, NJ, United States)
Date Acquired
August 13, 2013
Publication Date
February 22, 1988
Publication Information
Publication: Applied Physics Letters
Volume: 52
ISSN: 0003-6951
Subject Category
Electronics And Electrical Engineering
Accession Number
88A27005
Funding Number(s)
CONTRACT_GRANT: NAS5-28602
Distribution Limits
Public
Copyright
Other

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