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Ballistic transport in II-VI semiconductor compounds and alloysRealistic band structures are used in calculating the group velocity and scattering rates for electrons with injection energies up to 1 eV in ZnTe, CdTe, and the low-effective-mass alloy Hg(0.7)Cd(0.3)Te. Scattering from longitudinal optical phonons, ionized impurities, and alloy disorder have been included in the full band-structure calculation, which automatically includes both intra- and intervalley scattering. Of the II-VI materials considered, at 77 K HgCdTe is superior for low injection energies (up to 0.25 eV) while CdTe is superior at higher injection energies (1 eV) at room temperature. The attainable mean free paths (equal to or greater than 1000 A) and group velocities (equal to or greater than 10 to the 8th cm/s) for both systems are comparable to values found in III-V systems.
Document ID
19880040878
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Berding, M. A.
(SRI International Corp. Menlo Park, CA, United States)
Krishnamurthy, S.
(SRI International Corp. Menlo Park, CA, United States)
Sher, A.
(SRI International Menlo Park, CA, United States)
Chen, A.-B.
(Auburn University AL, United States)
Date Acquired
August 13, 2013
Publication Date
January 1, 1988
Publication Information
Publication: Journal of Crystal Growth
Volume: 86
Issue: 1-4
ISSN: 0022-0248
Subject Category
Solid-State Physics
Accession Number
88A28105
Funding Number(s)
CONTRACT_GRANT: F49620-85-C-0103
CONTRACT_GRANT: NAS1-12232
Distribution Limits
Public
Copyright
Other

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