Internal temperature gradient of alloy semiconductor melts from interrupted growth experiments

Interrupted growth experiments on Hg(0.8)Cd(0.2)Se alloys were performed in an attempt to estimate the actual internal temperature gradient in the melt during directional solidification. The results have been analyzed in terms of a theoretical model which assumes an axial composition profile characteristic of diffusion controlled solute redistribution during growth. A comparison of the calculated and measured values suggests a reduction in the applied (empty furnace) temperature gradient by about a factor of three. Values of the interface segregation coefficient (k) determined from the phase diagram, predict values of solute concentration build up in the solid during growth interruptions which are inconsistent with measured results. It appears that the k values used tend to underestimate the actual k values for higher alloy compositions and overestimate k for the lower alloy compositions.